Measurement and Modeling of GaAs Based Nano-pHEMT: Small Signal to Large Signal Analysis

In this paper, GaAs-based nano-pHEMT has been measured and modeled using small signal and large signal analysis. Three distinct simulation methods have been used for DC characterization, and the results have been compared with measurements. Two separate simulation methods have been used for RF characterization, and the results have been verified with measurements. It is shown that the simulated findings accurately reflect the measured values. Additionally, it was found that both the large and small signal models-are agreed with the measured data up to 22 GHz at the same biasing point. The simulation and measurement findings are differed with less than 10%, demonstrating that the modeling procedures were accurate.