The essential difference between remote epitaxy and van der Waals epitaxy: Long-range orbital hybridization at the GaN/graphene/AlN interface

Journal of Crystal Growth(2023)

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摘要
•Remote epitaxial growth of GaN on graphene.•The number of graphene layers affects the in-plane orientation of the grown GaN.•Revealing the essential difference between remote epitaxy and van der Waals epitaxy.•DFT calculations of the electronic properties of the GaN/graphene/AlN interface.
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关键词
A3. MOCVD,A3. Remote epitaxy,B1. GaN,B1. Graphene,A1. First principles
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