Electronic transport properties of GeS single crystals grown by vapor transport from molten GeS source

•Hall effect measurements in GeS single crystal for the first time.•Hall effect measured between 180 and 450 K using the Van der Pauw method.•Impurity concentration in GeS single crystal analyzed using GDMS for the first time.•Crystalline quality estimated by X-ray rocking curve method for the first time.•GeS single crystal grown by vapor transport from molten GeS source.