Improvement of surface morphology by optimizing the growth conditions in solution growth of SiC single crystal

Journal of Crystal Growth（2023）

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摘要

•4H-SiC single crystal with 2-inch diameter was grown via solution technique.•Surface morphology of crystal was improved by optimizing the growth conditions.•Parasitic nucleation can be inhibited as the seed holder was wrapped by the BN cap.

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关键词

A1. Crystal morphology,A1. Fluid flows,A2. Growth from solutions,A2. Top seeded solution growth,A2. Single crystal growth,B2. Semiconducting materials

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