Effects of constant voltage stress on bipolar degradation in 4H-SiC IGBT

Yunlai An,Wenting Zhang,Xinling Tang,Xiping Niu,Liang Wang,Xiaolei Yang,Zhanwei Shen, Junmin Sun,Ling Sang,Rui Liu,Zechen Du,Weixia Luo,Ling Li,Zhongyuan Chen,Xiaoguang Wei,Fei Yang

Journal of Crystal Growth（2023）

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摘要

•The bipolar degradation of 18 kV SiC IGBT.•The bipolar degradation of output current is only 5.6%.•A good guidance for controlling defects of high-voltage devices.

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关键词

A1. SiC,A2. IGBT,B1. Bipolar degradation,B2. Constant voltage stress

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