Enhanced Performance of a Metal-insulator-semiconductor Structured p/n-Electrode for InGaN-based Green LEDs

The effect of inserting an insulating layer between the p/n-electrode and the semiconductor are fabricated and investigated for gallium nitride (GaN)-based Micro light-emitting-diodes (µ-LEDs). The 2-nm Al 2 O 3 insulator layer is inserted to form the MIS structure by using an atomic deposition system, which improves the interband tunneling efficiency and the corresponding hole injection efficiency somehow. Therefore, the current-voltage characteristic is increased when compared with a traditional GaN-LED.