Two-photon process in F treated AlGaN/GaN heterojunction HEMT device

In this paper, we find a new method for deep energy level detection of F within AlGaN/GaN heterojunction HEMT device, which successfully detected the energy level of F elements in AlGaN/GaN heterojunctions by a two-photon process combined with polar organic liquids treatment techniques. Two lights illuminated the device surface at the same time. The rapid increase of I ds can be observed only when the wavelengths of light corresponding to the F energy level. Thus, the energy level of the F element in AlGaN/GaN heterojunction open-gate HEMT devices was successfully detected. This method provides a new idea for the deep energy level detection of III-V compound semiconductor devices.