Investigation Between Recover Behavior and Defect with Variation of Light Source in AlGaN/GaN HEMTs after Hot-Carrier Stress
IEEE ELECTRON DEVICE LETTERS（2023）
关键词
MODFETs,HEMTs,Wide band gap semiconductors,Logic gates,Aluminum gallium nitride,Gallium nitride,Electron traps,AlGaN,GaN HEMT,hot-carrier stress,illumination,recovery
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