Performance analysis of GaN-FINFET for RFIC application with respect to different FinWidth's

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS(2023)

Cited 0|Views2
No score
Abstract
GaN has become a prevailing semiconductor in case of power and RF applications. The higher ranking material parameters of GaN, like wider band-gap, the higher breakdown electric field as well as higher electron velocity when compared to materials like Si, SiC, GaAs etc; allow GaN FINFET to reveal potential advantages such as high voltage and high frequency applications. In this work, a comprehensive study on RF and linearity analysis on Heterojunction-free GaN layer FINFET through visual technology computer-aided design (TCAD) device simulator is been illustrated. The influence of varying the Finwidth's of the device on numerous RF parameters like drain current, transconductance (g(m)), output conductance (g(d)), gate capacitances(C-gd and C-gs), cut-off frequency (f(T)) are studied. And also, the impact of varying the Finwidth's of the device on the numerous linearity parameters like g(m2), g(m3), VIP3, IIP3, 1 dB compression point were also studied. It is been observed that the higher Finwidth value is more worthy for radio frequency integrated circuit (RFIC) applications.
More
Translated text
Key words
2-D electron gas (2-DEG),fin-shaped field-effect transistor (FINFET),heterojunction,IIP3,linearity,radio frequency integrated circuits (RFIC),VIP2,VIP3
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined