Schottky-Contact Formation between Metal Electrodes and Molecularly Doped Disordered Organic Semiconductors

We study using three-dimensional kinetic Monte Carlo (KMC) simulations to what extent the formation of Schottky contacts between a metal electrode and a molecularly doped disordered organic semiconductor can be understood from the theory for crystalline inorganic semiconductors, adapted to include the effects of the localized nature of the states in which the charge carriers reside and the hopping transport in between these states. The thickness of the Schottky-contact depletion region is found to be significantly smaller than as expected when the energetical disorder is neglected. The presence of energetic disorder is also found to influence the voltage dependence of the width of the depletion regions near the contacts of singlelayer double-Schottky-contact devices. The voltage drop over the two depletion regions and the remaining charge-neutral bulk layer is shown to be described successfully by a semianalytical model, based on an accurately parameterized bulk mobility function of the dopant concentration, energetic disorder, and the electric field. We furthermore find that the mobility in the depletion regions is drastically reduced. As a result, the depletion-region formation process can be ultraslow, with a characteristic time scale ranging from microseconds to beyond milliseconds.