Performance Improvements of SiGe HBTs in 90nm BiCMOS Process with fT/fmax of 340/410 GHz.
Uppili S. Raghunathan,Saurabh Sirohi, V. Ruparelia,P. K. Sharma,Dimitris P. Ioannou,Vibhor Jain, H. K. Kakara, S. Gedela,V. Vanukuru,P. Dongmo, C. Luce, R. Hazbun, R. Krishnasamy,J. Hwang, M. Levy,K. Welch, S. Liu, B. Cucci, S. Cole, J. Kantarovsky, A. Vallett, I. McCallum-Cook, M. Yu, R. Phelps, A. Divergilio, A. Sturm, M. Peters, S. Johnson, R. Rassel, M. Lagerquist, M. Kerbaugh, K. Newton,J. Pekarik, Q. Liu BCICTS（2022）
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