Recent Progress in the Analysis of Electromigration and Stress Migration in Large Multisegment Interconnects

Traditional approaches to analyzing electromigration (EM) in onchip interconnects are largely driven by semi-empirical models. However, such methods are inexact for the typical multisegment lines that are found in modern integrated circuits. This paper overviews recent advances in analyzing EM in on-chip interconnect structures based on physics-based models that use partial differential equations, with appropriate boundary conditions, to capture the impact of electron-wind and back-stress forces within an interconnect, across multiple wire segments. Methods for both steady-state and transient analysis are presented, highlighting approaches that can solve these problems with a computation time that is linear in the number of wire segments in the interconnect.