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Photoluminescent Properties of the SiO2/Si System with Ion-Synthesized Hexagonal Silicon of the 9R-Si Phase: Effect of Post-Implantation Annealing

A. A. Nikolskaya,D. S. Korolev,V. N. Trushin,P. A. Yunin,A. N. Mikhaylov,A. I. Belov,A. A. Konakov,E. V. Okulich,D. A. Pavlov,D. I. Tetelbaum

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS（2023）

引用 3|浏览25
关键词
Hexagonal silicon,9R-Si phase,SiO2,Si system,Kr plus ion irradiation,Post-implantation annealing,Photoluminescence,Mechanical stress
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