Tunable Topological States in Stacked Chern Insulator Bilayers

NANO LETTERS(2023)

引用 1|浏览15
暂无评分
摘要
The emergence of intrinsic quantum anomalous Hall (QAH) insulators with a long-range ferromagnetic (FM) order triggers unprecedented prosperity for combining topology and magnetism in low dimensions. Built upon atom-thin Chern insulator monolayer MnBr3, we propose that the topologically nontrivial electronic states can be systematically tuned by inherent magnetic orders and external electric/optical fields in stacked Chern insulator bilayers. The FM bilayer illustrates a high-Chern-number QAH state characterized by both quantized Hall plateaus and specific magneto-optical Kerr angles. In antiferromagnetic bilayers, Berry curvature singularity induced by electrostatic fields or lasers emerges, which further leads to a novel implementation of the layer Hall effect depending on the chirality of irradiated circularly polarized light. These results demonstrate that abundant tunable topological properties can be achieved in stacked Chern insulator bilayers, thereby suggesting a universal routine to modulate d-orbital-dominated topological Dirac fermions.
更多
查看译文
关键词
stacked chern insulator bilayers,tunable
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要