Design of auto-store circuit for nvSRAM with SONOS access transistor

•In this paper, the circuit that can perform store and restore operation of nvSRAM is designed. The suggested auto store circuit is consisted by two small circuit parts (store circuit and restore circuit).•The nvSRAM replaced its access transistors to flash memory needs higher voltage for store operation. It demands much energy and additional voltage source to store a data.•Besides restore process is also needed when it recalls the data to SRAM part. The suggested store and restore circuit charges their capacitors when power is supplied. When the power is off, the store circuit discharges its capacitors and applies higher voltage to word line for the store operation.•And when the power is supplied again, the restore circuit discharges its capacitor and applies pre-charge voltage and restore voltage to bit line and word line for the restore operation.•The Auto store circuit does not need additional voltage source because it shares source with nvSRAM and can perform the store, restore operation in sudden power off.