A physics-based TCAD framework for NBTI

Ravi Tiwari,Meng Duan,Mohit Bajaj,Denis Dolgos,Lee Smith,Hiu Yung Wong,Souvik Mahapatra

Solid-State Electronics（2023）

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摘要

•A fully physical TCAD framework to model the NBTI is validated with differently processes MOSFET measured data.•RD model with ABDWT model for interface trap generation, RDD model for bulk trap generation, ABDWT model for hole trapping is used.•Framework Validation in TCAD in 3D FinFETs and GAA-FETs is in progress.

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关键词

NBTI,RD model,ABDWT model,RDD model,Threshold voltage shift,MOSFETs,TCAD modeling,Hydrogen diffusion,Interface trap generation,Hole trapping,Bulk trap generation

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