Cu layer derived by accelerated microparticles on ZnO:Al/p-Si heterojunction

Cu micrometalic particles with the supersonic velocity (3 Mac) were applied to determine the optimum microparticle bombardment effect on the ZnO:Al thin-film surface derived by sol–gel method (which allows mixing at the atomic level to form colloidal particles). The mechanical damage deriving by the Cu particles with high kinetic energy has indicated the practical coating parameters (presenting surface related aspects) for its fabrication steps to use in the diot applications. The key parameters of the practical ohmic contact deposition on the film surface (describing the functional behavior of the ZnO:Al/p-Si heterojunction) were examined to develop low ohmic contact resistance (derived by using Cu layer) for use in optoelectronic devices. The annealing of ZnO:Al/p-Si heterojunction (at 700 °C in vacuum) has supported to obtain a suitable metal contact with optimum low resistance by using the cold gas dynamic spraying technique. The conductive and rectifier behaviors of ZnO:Al/p-Si heterojunction have indicated the utilization of the Cu stack layer without the need for the extra thermal annealing treatment of Cu ohmic contact (after the annealing of ZnO:Al/p-Si heterojunction according to the specific analyses for applications in optoelectronics). The generated damage depended on the acceleration of Cu particles through the trapezium structure of the ZnO:Al surface (annealed at 800 °C). The Cu particles with high purity have been provided to avoid the cracked surface (annealed at 700 °C in vacuum). The developed in-depth surface performance has emphasized the relation to the control of the surface properties at the atomic level (by using the sol–gel dip-coating technique). The annealing process (affecting the thickness of the film) has indicated the control of the temperature as the key parameter for avoiding the mechanical damage (depending on the bombardment of the dense micrometallic particles at ultra-high speed) on the film surface.