Pulsed chemical vapor deposition for crystalline aluminum nitride thin films and buffer layers on silicon and silicon carbide

Aaron J. McLeod,Scott T. Ueda,Ping C. Lee,Jeff Spiegelman,Ravindra Kanjolia,Mansour Moinpour,Jacob Woodruff,Andrew C. Kummel

Thin Solid Films（2023）

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摘要

•A deposition method for crystalline aluminum nitride at 400 and 580 °C is detailed.•These films template c-axis oriented growth for sputtered aluminum nitride.•Templated films show enhanced crystallinity compared to entirely sputtered films.•Epitaxial growth by pulsed CVD at 580 °C is observed on 4H-SiC.

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关键词

Aluminum nitride,Chemical vapor deposition,X-ray diffraction,X-ray photoelectron spectroscopy,Transmission electron microscopy

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