Growth of type I superlattice III-V heterostructure in horizontal nanowires enclosed in a silicon oxide template

Enrico Brugnolotto,Markus Scherrer,Heinz Schmid,Vihar Georgiev,Marilyne Sousa

Journal of Crystal Growth（2023）

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摘要

•Diffusion mechanisms inside a template nanotube differ for III- and V- precursors.•Different diffusion mechanisms influence heterointerface quality during growth.•Introduction of hold steps in the growth recipe improves heterointerface control.•Interface control allows for the growth of a III-V type I superlattice.•Hetero-structured nanowires nucleate from a Si seed inside a SiO2 template.

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关键词

A1. Characterization,A1. Nanostructures,A3. Metalorganic chemical vapor deposition,A3. Quantum wells,A3. Selective epitaxy,B2. Semiconducting III-V materials

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