Kinetic influences on void formation in epitaxially regrown GaAs-Based PCSELs

Adam F. McKenzie,Aye M. Kyaw,Neil D. Gerrard,Donald A. MacLaren,Richard A. Hogg

Journal of Crystal Growth（2023）

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摘要

•SEM and STEM-based study of MOVPE regrown GaAs photonic crystal gratings.•Extent of grating infill is investigated for AlAs, AlGaAs, and GaAs infill layers.•Void formation promoted for low surface mobility Al-containing layers.•An in-plane asymmetry in void shape is observed for circular grating pits.•Stable and dynamic faceting is observed along orthogonal crystal plane directions.

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关键词

A1. Characterisation,A1. Nanostructures,A3. Metalorganic Vapour Phase Epitaxy,B2. Semiconducting III-V Materials,B3. Laser Diodes,B3. Photonic Crystal Surface Emitting Lasers

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