Metalorganic vapor-phase epitaxy of β-(AlxGa1-x)2O3 on (2¯ 0 1) Ga2O3 substrates

Xueyi Zheng,Jun Zheng,Chen He,Xiangquan Liu,Yuhua Zuo,Buwen Cheng,Chuanbo Li

Journal of Crystal Growth（2023）

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摘要

•β-(AlxGa1-x)2O3 thin films with up to 24.01% Al content were grown via MOCVD.•Step bunching growth mode was proposed.•β-(AlxGa1-x)2O3/Ga2O3 multi-quantum well structures with high crystal quality were grown.

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关键词

A1. Crystal structure,A1. Crystal morphology,A1. High resolution X-ray diffraction,A3. Metalorganic chemical vapor deposition,B2.Semiconducting gallium compounds,A3. Oxides

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