Robust mica perovskite photoelectric resistive switching memory

Metal halide perovskites have attracted considerable attention for use in flexible resistive random access memory (RRAM), due to their good photoelectric regulation, high ON/OFF ratios, and low fabrication costs. Flexible conductive substrates play a crucial role in improving RRAM device performance. Herein, mica/silver nanowires welded with aluminum-doped zinc oxide (mica/AgNWs@AZO) substrates with high-temperature resistance, high flexibility, high conductivity, and good stability have been successfully fabricated. The average sheet resistance 3.5 Ω sq−1 of the conductive mica substrate is 68% lower than that of a commercial PET/ITO, and it remains stable below 13.1 Ω sq−1 under 200 °C. The maximum conductivity of the mica/AgNWs@AZO substrate can reach 58 S/m after 64 h of tensile stress bending at a radius of 20 mm. Perovskite CsPbBr3 nanocrystal (NC) RRAM is constructed on the mica/AgNWs@AZO substrate. The ON/OFF ratio 103 of the device in light is 102 times higher than that in dark under 5000 bending cycles. Flexible perovskite RRAM is a promising candidate for next-generation-logic, adaptive, non-volatile memory devices.