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Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY(2023)

Cited 5|Views45
Key words
Germanium,Stress,FinFETs,Logic gates,Temperature measurement,Silicon,Thermal variables control,Ge,FinFET,NBTI,activation energy,low-frequency noise
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