Scintillation characteristics of chemically processed Ce:GAGG single crystals

We investigated the correlation between the surface finish and luminescence properties of chemically polished cerium-doped single-crystal Gd3Al2Ga3O12 scintillators (Ce:GAGG), from the crystallographic perspective. The intrinsic defects in the crystals were identified via photoluminescence spectroscopy followed by scanning electron microscopy and X-ray diffraction to analyze their surface morphologies. Finally, the samples were individually wrapped with an enhanced specular reflector (ESR), coupled with a photomultiplier tube, placed inside a dark box, connected to a digitizer, and irradiated with a Cs-137 radioactive source to evaluate the relative light (signal) output and energy resolution of each sample. The as-cut (rough) Ce:GAGG single-crystal samples, that were chemically polished with phosphoric acid at 190 degrees C in air for 60 min, demonstrated a 33.1% increase in signal amplitude (light output to photosensor) and 2.4% (absolute value) improvement in energy resolution, which were comparable to those obtained for the mechanically polished sample. For these samples, the surface roughness was found to be similar to 430 nm, which was approximately half of that of the mechanically polished sample. The chemical polishing method used in this study is a cost-effective and straightforward technique to improve structural imperfections and can facilitate the treatment of inorganic scintillators with complex shapes and/or on a large scale.