Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
arxiv(2023)
摘要
Silicon/silicon-germanium heterostructures have many important advantages for
hosting spin qubits. However, controlling the valley splitting (the energy
splitting between the two low-lying conduction-band valleys) remains a critical
challenge for ensuring qubit reliability. Broad distributions of valley
splittings are commonplace, even among quantum dots formed on the same chip. In
this work, we theoretically explore the interplay between quantum-well
imperfections that suppress the valley splitting and cause variability, such as
broadened interfaces and atomic steps at the interface, while self-consistently
accounting for germanium concentration fluctuations. We consider both
conventional and unconventional approaches for controlling the valley
splitting, and present concrete strategies for implementing them. Our results
provide a clear path for achieving qubit uniformity in a scalable silicon
quantum computer.
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关键词
quantum wells,valley splitting
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