Generalized-Accumulated-Temperature Parameter for Characteristic Prediction of Metal-Based Mems Cantilever

The Generalized-Accumulated-Temperature (GAT) is proposed for characteristic prediction of metal-based MEMS cantilever in this work for the first time. GAT is a thermal footprint parameter for thermo-sensitive devices with both temperature and time considered. RF MEMS switches are employed as a typical alloy-cantilever-based devices to investigate the effect of GAT. The GAT parameter is used in thermal budget design and device lifetime prediction of RF MEMS switch, which shows better fitting performance than traditional Larson-Miller (LM) method. Moreover, the GAT parameter can not only help metal-cantilever-based MEMS device realization, will also be used as an important parameter in other thermo-sensitive MEMS devices.