Engineering Multicolor Radiative Centers in hBN Flakes by Varying the Electron Beam Irradiation Parameters.

Nanomaterials (Basel, Switzerland)(2023)

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摘要
Recently, hBN has become an interesting platform for quantum optics due to the peculiar defect-related luminescence properties. In this work, multicolor radiative emissions are engineered and tailored by position-controlled low-energy electron irradiation. Varying the irradiation parameters, such as the electron beam energy and/or area dose, we are able to induce light emissions at different wavelengths in the green-red range. In particular, the 10 keV and 20 keV irradiation levels induce the appearance of broad emission in the orange-red range (600-660 nm), while 15 keV gives rise to a sharp emission in the green range (535 nm). The cumulative dose density increase demonstrates the presence of a threshold value. The overcoming of the threshold, which is different for each electron beam energy level, causes the generation of non-radiative recombination pathways.
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关键词
defect-related light emission,electron irradiation,hexagonal boron nitride,photoluminescence
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