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An Oxide-Based Bilayer ZrO₂/IGZO Memristor for Synaptic Plasticity and Artificial Nociceptor

IEEE TRANSACTIONS ON ELECTRON DEVICES(2023)

Cited 17|Views6
Key words
Memristors,Synapses,Biology,Tin,Immune system,Electrodes,Switches,Artificial nociceptor,bilayer (BL),memristor,neuromorphic device,synaptic plasticity
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