An Accurate Model for InP HEMT Small-Signal Equivalent Circuit Based on EM Simulation
IEEE TRANSACTIONS ON ELECTRON DEVICES（2023）
关键词
Integrated circuit modeling,Logic gates,HEMTs,Indium phosphide,III-V semiconductor materials,Equivalent circuits,Parameter extraction,Different gate widths,electromagnetic (EM) simulation,indium-phosphide-based high-electron-mobility transistors (InP-based HEMTs),small-signal model
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