Low Power Non-Volatile 7T1M Subthreshold SRAM Cell

A new modified 7T1M non-volatile SRAM cell is presented in this paper for low power applications at subthreshold voltage (very low voltage) simply by connecting the memristor directly with storage node which is acting as storage element and adding a transistor in between the two storage nodes with feedback connection gives better performance in terms of average delay, read /write operations and RSNM/WSNM. The memristor based circuits are simulated at subthreshold is a new insight and a new effort in technology made with improvement of approximately 61% and 23% of RSNM and WSNM respectively compared to existing memory cell 7T1M and power dissipation is decreased by 66% whereas read delay and write delay obtained is nominal. Moreover, It has also simulated an adjusting 6T2M and conventional 6T at subthreshold voltage i.e. VDD=0.3V to compare its stability behaviour at lower supply voltage.