Design and Performance Analysis of CMOS NCFET Using PZT Ferroelectric Material

This brief is reporting a simulation and analysis of CMOS negative capacitance field effect transistor with ferroelectric materials. Simulation is done by using MATLAB tool. It has been found that subthreshold swing rapidly decreases with decrease in thickness of ferroelectric materials. With the help of MATLAB tools different parameters calculated and analyzed. At $t_{f}e=12nm$, we measured SS=24mV/dec, which is less than the Boltzmann limit of SS (60mV/dec). We may also observe how many factors, including drain voltage, substrate doping, and ferroelectric thickness, affect NCFET performance. NCFETs are hence beneficial in low power application devices.