Electrochemically reduced graphene oxide (ERGO)-Cu bilayer structure fabricated at room temperature for future interconnects.

Copper is an important interconnect material in integrated circuits (IC) due to its outstanding electrical and thermal properties. However, the development of the IC industry requires novel interconnect materials with higher conductivity. Here, uniform graphene oxide (GO) is deposited on copper by electrophoretic deposition (EPD) to obtain a GO-Cu bilayer structure at room temperature. (3-Mercaptopropyl) trimethoxysilane (MPTS) is self-assembled on the Cu anode surface, which protects the anode from oxidation during the EPD process. We find that the hydrolysis of methoxy under the promotion of EPD voltage can facilitate the uniform deposition of GO and enhance the interface bonding force. In order to achieve better electrical performance, different reduction methods are conducted to reduce the structural disorder of GO. ERGO-Cu reduced by the electrochemical reduction method at -0.75 V for 1 min shows the lowest square resistance with a 16% resistance decrease compared with the GO-Cu structure and a 4.5% decrease compared with Cu substrate, due to the proper adjustment of the GO crystal structure. The room temperature fabricated ERGO-Cu bilayer structure provides a possibility for future interconnects with improved conductivity.