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Testing and Assessment on the Short-Circuit Withstand Capability of Press-Pack IGBT Considering the Unbalanced Clamping Forces

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS(2023)

Cited 2|Views35
Key words
Insulated gate bipolar transistors,Clamps,Force,Logic gates,Finite element analysis,Analytical models,Conductivity,Insulated gate bipolar transistor (IGBT),press-pack (PP),short-circuit (SC) withstand capacity,unbalanced clamping force
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