Beneficial Role of Noise in Hf-based Memristors.
ISCAS(2022)
摘要
The beneficial role of noise in the performance of Hf-based memristors has been experimentally studied. The addition of an external gaussian noise to the bias circuitry positively impacts the memristors characteristics by increasing the OFF/ON resistances ratio. The known stochastic resonance effect has been observed, when changing the standard deviation of the noise. The influence of the additive noise on the memristor current-voltage characteristic and on the set and reset related parameters are also presented.
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关键词
Stochastic resonance, memristors, RRAM devices, resistive switching
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