World-most energy-efficient MRAM technology for non-volatile RAM applications

T. Y. Lee,J. M. Lee,M. K. Kim, J. S. Oh,J. W. Lee,H. M. Jeong, P. H. Jang, M. K. Joo, K. Suh, S. H. Han, D.-E. Jeong, T. Kai, J. H. Jeong,J.-H. Park,J. H. Lee,Y. H. Park, E. B. Chang,Y. K. Park,H. J. Shin, Y. S. Ji, S. H. Hwang, K. T. Nam, B. S. Kwon, M. K. Cho, B. Y. Seo,Y. J. Song,G. H. Koh,K. Lee,J.-H. Lee,G. T. Jeong

2022 International Electron Devices Meeting (IEDM)(2022)

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摘要
We present the most energy-efficient 16 Mb non-volatile RAM (nvRAM) product with nearly unlimited endurance by using 28-nm embedded MRAM (eMRAM) technology. Among commercially available standalone nvRAM products, this product features the smallest package dimension of 30 mm 2 at 16 Mb and best-in-class active power of 14 mW (read) and 27 mW (write). By extensive package testing, endurance over 1E14 cycles at - 25 °C and 10-years data retention at 89 °C have also been verified. Extending 28-nm eMRAM technology to 14-nm FinFET resulted in 33% area scaling and 2.6× faster read cycle time. This proves the potential of eMRAM technology as a low-leakage working memory solution for SoC applications.
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关键词
mram,world-most,energy-efficient,non-volatile
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