A 128-Kbit GC-eDRAM with Negative Boosted Bootstrap Driver for 11.3× Lower-Refresh Frequency at a 2.5% Area Overhead in 28-Nm FD-SOI
IEEE SOLID-STATE CIRCUITS LETTERS（2023）
Key words
Voltage,Boosting,Capacitors,Transistors,Capacitance,Random access memory,Generators,Bootstrap driver,embedded dynamic random-access memory (eDRAM),gain cell (GC),write assist circuitry
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