Room-temperature InAsSb pBin detectors for mid-infrared application

•Dear Editor,•This paper entitled “Room-temperature InAsSb pBin detectors for mid-infrared application”, and it has four research highlights:•We have designed pBin photodetectors with InAsSbP barrier and grown by Liquid Phase Epitaxy(LPE) technique.•We have obtained InAsSbP material with an ideal barrier with near zero valence band offset by adjusting the composition and doping.••We have fabricated the room-temperature photodetectors with clear room-temperature photoresponse in the middle wavelength infrared (MWIR) range.•Our pBin photodetectors have good performance at zero bias and no needing a turn-on operating bias.