Dual gate synthetic MoS2 MOSFETs with 4.56 mu F/cm(2) channel capacitance, 320 mu S/mu m Gm and 420 mu A/mu m Id at 1V Vd/100nm Lg

We have engineered dual gate (DG) MoS2 transistors with scaled top and back gate stacks based on a surface physisoiption ALD approach. A GdAlOx. interfacial layer (IL) between the TMA 'soak' seed and the HfO2 layer has been introduced to improve Vt control, hysteresis, and long channel mobility. Connected dual gate MOSFET with 1-2ML MoS2 channel reaches 420 mu A/um drain current and 4.56 mu F/cm(2) capacitance at 2.6V gate bias (similar to 5x10(13)/cm(2) sheet charge density).