0.7- $\mu$ m InP DHBT Technology With 400-GHz ${f}_{{T}}$ and ${f}_{\text{MAX}}$ and 4.5-V BV_CE0 for High Speed and High Frequency Integrated Circuits

V. Nodjiadjim, M. Riet, C. Mismer, R. Hersent,F. Jorge, A. Konczykowska, J.-Y. Dupuy

IEEE Journal of the Electron Devices Society（2019）

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摘要

We report the performances of a 0.7-μm InP/GaInAs DHBT developed in III-V Lab demonstrating both f _T and f _MAX of 400 GHz as well as a high fabrication yield and homogeneity on a 3-inch wafer. This technology is used for the fabrication of a very high speed 2:1 multiplexing selector operating up to 212-Gb/s, establishing a speed record. A 5.4-Vpp 100-Gb/s distributed differential selector-driver, as well as a 4.3-Vpp 64-GBd 8-pulse-amplitude-modulation (PAM) (192 Gb/s) high-speed power digital-to-analog converter (DAC) were also realized in this technology.

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关键词

Heterojunction bipolar transistor,InP/GaInAs DHBT,integrated circuits

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0.7- $\mu$ m InP DHBT Technology With 400-GHz ${f}_{{T}}$ and ${f}_{\text{MAX}}$ and 4.5-V BVCE0 for High Speed and High Frequency Integrated Circuits

0.7- $\mu$ m InP DHBT Technology With 400-GHz ${f}_{{T}}$ and ${f}_{\text{MAX}}$ and 4.5-V BV_CE0 for High Speed and High Frequency Integrated Circuits