Probing the electrical performance improvement of FET device based on multilayer MoS2 material

Tao Han,Hongxia Liu,Shulong Wang,Shupeng Chen

Results in Physics（2023）

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摘要

•The FET device has the high on/off ratio (∼1 × 107) and mobility (∼34 cm2/V·s).•The current switching ratio is improved by one order of magnitude after annealing.•FET device are characterized by optical microscope, Raman spectrometer and SEM.•The annealing treatment can improve the electrical performance and vdWs gap.

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关键词

Multilayer MoS2 material,FET,Annealing treatment,Electrical performance

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