Performance of vertical gate-all-around nanowire p-MOS transistors determined by boron depletion during oxidation

Chiara Rossi,Alexander Burenkov,Peter Pichler, Eberhard Bär,Jonas Müller,Guilhem Larrieu

Solid-State Electronics（2023）

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摘要

•3D TCAD simulation of vertical junctionless gate-all-around nanowire transistors.•Boron depletion during oxidation deeply affects doping in nanowires.•Small nanowires show more pronounced boron depletion.•Prediction of subthreshold slope requires accurate boron segregation simulations.

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关键词

Nanowire FET,3D TCAD,Process simulation,Device simulation,Oxidation,Boron segregation,Junctionless transistors,Gate-all-around

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