Enabling medium thick gate oxide devices in 22FDX® technology for switch and high-performance amplifier application

Tom Herrmann,Alban Zaka,Zhixing Zhao,Binit Syamal,Wafa Arfaoui,Ruchil Jain,Ming-Cheng Chang, Sameer Jain,Shih Ni Ong

Solid-State Electronics（2023）

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摘要

•Medium thick gate oxide devices with steeper doping profiles on FDSOI.•Enabling gate length scaling and reduce Ron, thus increase Ft and Fmax.•Electron mobility increase due to low channel doping.•Improved switch FoM Coff*Ron/Vmax.

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关键词

TCAD,Device Simulation,FDSOI,Switch,Power Amplifier

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