High-speed photothermally triggered bidirectional current switching in VO2/AlN/Si-based heterostructure device

•Bidirectional current switching (BCS) of VO2 devices can be photothermally realized.•We analyzed and revealed parameters that can make breakthrough in the BCS speed.•They are the substrate thermal conductivity and the VO2 film critical temperature.•To verify the predicted results, we fabricated VO2/AlN/Si heterostructure devices.•A highest-ever repetition rate of 100 Hz was attained in a 50 mA BCS of the device.