Demonstration on dynamic evolution of energy band offsets based in NiOx/Ga2O3 P-N heterojunction interface under heat effect

The in-situ temperature-dependent XPS characterization technique was first performed to track dynamically the variation of band offsets in NiOx/Ga2O3 junction with the temperature from 300 K to 473 K. The temperature coefficient on band offsets is extracted to be −4 meV·K−1, which is valuable to attain the band offsets at the specific ambient temperature. This work makes a significant step to unveil the materials properties combined NiOx and Ga2O3, and develops semiconductor physics in electronic devices.