A Novel Dual Gate Hetero Dielectric Hetero Material Reconfigurable FET

Reconfigurable FET (RFET) is a multi-threshold (MT) device that holds significant scope to replace CMOS in low power applications and field programmable boards because RFET alone can be configured into either n/p-MOSFET or n/p-TFET with the help of two additional gates laid over source and drain regions. These gates on applying external potential of either +0.8 or −0.8 V can accumulate electrons or holes in source and drain regions. Therefore, RFET has cumulative benefits and shortcomings of both MOSFET and TFET such as better ON current of MOSFET with high OFF current, low OFF current of TFET with low drive current, and Schottky ambipolarity. Indeed, use of hetero material (HM) and hetero dielectric (HD) are able to manage these issues to some extent as discussed by some works in literature. However, there exists a large scope of improvement in RFET by virtue of dual gate (DG). The metal work function (WF) optimization of side-by-side gates lead to overall improvement of FET characteristics. Therefore, this work is focused on electrical characteristics analysis of a novel DG-HM-HD-RFET. We found that near-drain-gate-metal (M1) has greater impact than that of the near-source-gate-metal (M2) so that the optimized M1 (4.3 eV) and M2 (4.7 eV) of DG-HM-HD-RFET provide maximum ION/IOFF = 1012, minimum threshold voltage (Vth) = 0.12 V, and minimum subthreshold swing (SS) = 32 mV/decade. Finally, electrical characteristics of DG-HM-HD-RFET are compared with HM-HD-RFET and Si-HD-RFET. We found that the proposed device provides better performance and power efficiency than other alternatives and is a promising candidate for future configurable system design.