SiGe Gate-All-around Nanosheet Reliability

Huimei Zhou,Miaomiao Wang,Ruqiang Bao,Curtis Durfee,Liqiao Qin,Jingyun Zhang

IEEE International Reliability Physics Symposium (IRPS)（2022）

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摘要

In this paper, we present a detailed study of negative bias temperature instability (NBTI) and Time dependent dielectric breakdown (TDDB) reliability in p-type stacked gate- all -around (GAA) Nanosheet (NS) transistors with SiGe channel and compared with NS Si pFETs. Robust NBTI and TDDB reliability performance is achieved on SiGe gate-all-around NS.

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关键词

Semiconductor device reliability,Gate-All-Around (GAA),Nanosheet (NS),NBTI,Dielectric breakdown

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