Frequency dependant gate oxide TDDB model.

In this work, a new model of the time-dependent dielectric breakdown is proposed as a function of frequency. This is an analytical model based on an experimental observations of gate oxide breakdown at high frequencies on 28nm FDSOI technology in NMOS. This model considers two significant conditions: at first, the defect generation rate in the gate oxide is not constant over time, secondly, the recovery time is negligible. Following the experimental evidences, we found it possible to model four important characteristics of AC breakdown: frequency dependence, voltage acceleration factor (VAF), activation energy Ea, and the change of Weibull slope from DC to AC.