Reflection and temperature insensitive quantum dot lasers

Semiconductor Lasers and Applications XII(2022)

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摘要
We experimentally demonstrate that InAs/GaAs quantum dot (QD) lasers exhibit high reflection insensitivity in the wide temperature range of 293 K to 353 K, which is due to the low and thermal stable linewidth enhancement factor. This work shows the potential of QD lasers as uncooled and isolator-free on-chip laser sources for next-generation photonic integrated circuits.
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关键词
Quantum dot lasers, Optical feedback, Temperature stability
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