Simulation Study of a 650V Hybrid-Channel SiC Trench MOSFET with Improved On-State Performance

L. Zhang,T. Dai,P.M. Gammon,V.A. Shah,P.A. Mawby, M. Antoniou

Power Electronic Devices and Components（2022）

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摘要

•Formation of a lateral channel in a conventional trench device.•Electron conduction through both channels enhances the device's forward conduction performance.•Devices’ capacitance and short circuit robustness maintain at a good level.

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关键词

Silicon carbide,MOSFET,Hybrid,Trench,Model,On-resistance

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