Simulation Study of Enhancement Mode beta-Ga2O3 MOSFET with Ferroelectric Charge Storage Gate Stack Structure

In this work, an enhancement-mode (E-mode) beta-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) with the ferroelectric charge storage gate stack structure is numerically investigated. The device is simulated from the aspects of traps and material parameters, physical models, and voltage sources. And we found that the device is optimal in performance when the ferroelectric film thickness is 17 nm and the oxide layer thickness is 5 nm. The threshold voltage shifts from -0.2 V to 4.47 V after initialization, which makes the device transit from depletion-mode (D-mode) to E-mode. Moreover, the reliability of device is presented from the aspects of repeated scanning and temperature characteristics to estimate the sensitivity of threshold voltage.